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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1390 DESCRIPTION *High Breakdown Voltage: VCBO= 1500V (Min) *High Reliability APPLICATIONS *Designed for line-operated horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Base Voltage VCES Collector-Emitter Voltage VEBO Emitter-Base Voltage w w scs .i w VALUE 1500 V 1500 V 5 V 1 A 2.5 A UNIT .cn mi e IC Collector Current- Continuous ICP Collector Current-Pulse PC Collector Power Dissipation @ TC90 40 W TJ Junction Temperature 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD1390 TYP. MAX UNIT V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 1A B 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 1A B 1.5 V VCB= 750V; IE= 0 ICBO Collector Cutoff Current VCB= 1500V; IE= 0 50 A hFE DC Current Gain IC= 2A; VCE= 5V tf Fall Time tstg Storage Time w w w. IC= 2.5A, IBend= 1.1A, LB= 10H B .cn mi cse is 2 1 mA 7 1 s 11 s isc Websitewww.iscsemi.cn 2 |
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